Document Type : Research Paper
Department of Physics, Urmia Branch, Islamic Azad University, Urmia, Iran.
Silicon thin layers are deposited on glass substrates with the thickness of 103 nm, 147 nm and 197 nm. The layers are produced with electron gun evaporation method under ultra-high vacuum condition. The optical Reectance and the Transmittance of produced layers were measured by using spectrophotometer. The optical functions such as, real and imaginary part of refractive index, real and imaginary part of dielectric constant, real and imaginary part of conductivity, absorption coeficient and optical band gap energy are calculated basing on the Kramers-Kronig relations. The void fractions of the silicon lms are calculated by using Aspnes theorem. The effect of layer thickness on optical properties of silicon thin lms is investigated.